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product structure silicon monolithic integrated circuit this product is not designed prot ection against radioactive rays 1/32 www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 datashee t tsz22111 ? 14? 001 serial eeprom series automotive eeprom 125 operation spi bus eeprom BR25H010-2C general description BR25H010-2C is a serial eeprom of spi bus interface method. features ? high speed clock action up to 10mhz (max.) ? wait function by holdb terminal. ? part or whole of memory arrays settable as read only memory area by program. ? 2.5v to 5.5v single power source action most suitable for battery use. ? page write mode useful for initial value write at factory shipment. ? for spi bus interface (cpol, cpha)=(0, 0), (1, 1) ? self-timed programming cycle. ? low supply current at write operation (5v) : 1.0ma (typ.) at read operation (5v) : 1.0ma (typ.) at standby operation (5v) : 0.1 a (typ.) ? address auto increment function at read operation ? prevention of write mistake write prohibition at power on. write prohibition by command code (wrdi). write prohibition by wpb pin. write prohibition block setting by status registers (bp1, bp0). prevention of write mistake at low voltage. ? msop8, tssop-b8, so p8, sop-j8 package ? data at shipment memory array: ffh, status register bp1, bp0 : 0 ? more than 100 years data retention. ? more than 1 million write cycles. ? aec-q100 qualified. package page write number of pages 16 byte product number BR25H010-2C BR25H010-2C capacity bit format product number supply voltage msop8 tsso p-b8 sop8 sop-j8 1kbit 128x8 BR25H010-2C 2.5v to 5.5v msop8 2.90mm x 4.00mm x 0.90mm tssop-b8 3.00mm x 6.40mm x 1.20mm sop8 5.00mm x 6.20mm x 1.71mm sop-j8 4.90mm x 6.00mm x 1.65mm
BR25H010-2C 2/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 absolute maximum ratings (ta=25c) parameter symbol limits unit supply voltage vcc -0.3 to +6.5 v 380(msop8) *1 410(tssop-b8) *2 560(sop8) *3 permissible dissipation pd 560(sop-j8) *4 mw storage temperature range tstg -65 +150 c operating temperature range topr -40 to +125 c terminal voltage -0.3 to vcc+0.3 v ? when using at ta=25 or higher, 3.1mw(*1) , 3.3mw(*2) , 4.5mw (*3,*4)to be reduced per 1 memory cell characterist ics (vcc=2.5v to 5.5v) limits parameter min. typ. max. unit condition 1,000,000 cycles ta Q 85c 500,000 cycles ta Q 105c write cycles *5 300,000 cycles ta Q 125c 100 years ta Q 25c 60 years ta Q 105c data retention *5 50 years ta Q 125c *5: not 100% tested recommended operating ratings parameter symbol limits unit supply voltage vcc 2.5 to 5.5 input voltage vin 0 to vcc v input / output capacity (ta=25c, frequency=5mhz) parameter symbol conditions min max unit input capacity *6 c in v in =gnd 8 output capacity *6 c out v out =gnd 8 pf *6: not 100% tested
BR25H010-2C 3/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 dc characteristics (unless otherwise specified, ta=-40c to +125c, vcc=2.5v to 5.5v) limits parameter symbol min. typ. max. unit conditions input high voltage vih 0.7xvcc vcc +0.3 v 2.5v Qvcc Q 5.5v input low voltage vil -0.3 0.3x vcc v 2.5v Qvcc Q 5.5v output low voltage vol 0 0.4 v iol=2.1ma output high voltage voh vcc-0.5 vcc v ioh=-0.4ma input leakage current ili -2 2 av in =0v to vcc output leakage current ilo -2 2 av out =0v to vcc, csb=vcc icc1 2.0 ma vcc=2.5v,fsck=5mhz, te/w=4ms vih/vil=0.9vcc/0 .1vcc, so=open byte write, page write, write status register supply current (write) icc2 3.0 ma vcc=5.5v,fsck=5 or 10 mhz, te/w=4ms vih/vil=0.9vcc/0 .1vcc, so=open byte write, page write, write status register icc3 1.5 ma vcc=2.5v,fsck=5mhz vih/vil=0.9vcc/0 .1vcc, so=open read, read status register icc4 2.0 ma vcc=5.5v,fsck=5mhz vih/vil=0.9vcc/0 .1vcc, so=open read, read status register supply current (read) icc5 4.0 ma vcc=5.5v,fsck=10mhz vih/vil=0.9vcc/0 .1vcc, so=open read, read status register standby current isb 10 a vcc=5.5v csb=holdb=wpb=vcc, sck=si=vcc or =gnd, so=open
BR25H010-2C 4/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 ac characteristics (ta=-40c to +125c, unless otherwise specified, load capacity c l1 =100pf) 2.5v Qvcc Q 5.5v 4.5v Qvcc Q 5.5v parameter symbol min. typ. max. min. typ. max. unit sck frequency fsck 5 10 mhz sck high time tsckwh 85 40 ns sck low time tsckwl 85 40 ns csb high time tcs 85 40 ns csb setup time tcss 90 30 ns csb hold time tcsh 85 30 ns sck setup time tscks 90 30 ns sck hold time tsckh 90 30 ns si setup time tdis 20 10 ns si hold time tdih 30 10 ns data output delay time1 tpd1 60 40 ns data output delay time2 (c l2 =30pf) tpd2 50 30 ns output hold time toh 0 0 ns output disable time toz 100 40 ns holdb setting setup time thfs 0 0 ns holdb setting hold time thfh 40 30 ns holdb release setup time thrs 0 0 ns holdb release hold time thrh 70 30 ns time from holdb to output high-z thoz 100 40 ns time from holdb to output change thpd 60 40 ns sck rise time *1 trc 1 1 s sck fall time *1 tfc 1 1 s output rise time *1 tro 40 40 ns output fall time *1 tfo 40 40 ns write time te/w 4 4 ms *1 not 100% tested ac measurement conditions limits parameter symbol min. typ. max. unit load capacity 1 c l1 100 pf load capacity 2 c l2 30 pf input rise time 50 ns input fall time 50 ns input voltage 0.2vcc/0.8vcc v input / output judgment voltage 0.3vcc/0.7vcc v 0.7vcc 0.2vcc 0.8vcc input voltage 0.3vcc input/output judgement voltage figure 1. input/output judgment voltage
BR25H010-2C 5/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 serial input / output timing block diagram figure 5. block diagram figure 2. input timing si is taken into ic inside in sync with data rise edge of sck. input address and data from the most significant bit msb. figure 3. input / output timing so is output in sync with data fall edge of sck. data is output from the most significant bit msb. figure 4. hold timing so instruction decode control clock generation voltage detection write inhibition high voltage generator instruction register 1k eeprom address register data register address decoder read/write amp 8bit 8bit status register csb sck holdb 7bit 7bit wpb si csb sck si so tcs tcss tscks tsckwl tsckwh tdis tdih trc tfc high-z csb sck si so tpd toh tro,tfo toz tcsh tsckh tcs hi g h-z csb sck si n+1 "h" "l" n dn n-1 dn dn-1 holdb so dn+1 thfs thfh thoz thrs thrh tdis thpd high-z
BR25H010-2C 6/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 pin configuration pin descriptions terminal number terminal name input /output function 1 csb input chip select input 2 so output serial data output 3 wpb input write protect input write status register command is prohibited. write command is prohibited. 4 gnd all input / output reference voltage, 0v 5 si input start bit, ope code, address, and serial data input 6 sck input serial clock input 7 holdb input hold input command communications may be suspended temporarily (hold status) 8 vcc power source to be connected vcc holdb sck si csb so wpb gnd BR25H010-2C figure 6. pin assignment diagram
BR25H010-2C 7/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 typical performance curves 0 1 2 3 4 5 6 012 3456 supply voltage : vcc v input low voltage : vil v spec ta= -40 ta= 25 ta= 125 0 0.2 0.4 0.6 0.8 1 0123456 output low current : iol ma output low voltage : vol v spec ta= -40 ta= 25 ta= 125 0 0.5 1 1.5 2 2.5 3 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 output high current : ioh ma output high voltage : voh v spec ta= -40 ta= 25 ta= 125 0 1 2 3 4 5 6 012 3456 supply voltage : vcc v input high voltage :vih v spec ta= -40 ta= 25 ta= 125 figure 7. input high voltage vih (csb,sck,si,holdb,wpb) figure 8. input low voltage vil (csb,sck,si,holdb,wpb) figure 9. output low voltage vol, iol (vcc=2.5v) figure 10. output high voltage voh, ioh (vcc=2.5v)
BR25H010-2C 8/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 typical performance curves \ continued 0.0 0.5 1.0 1.5 2.0 2.5 3.0 012 3456 supply voltage : vcc [v] input leakage current: ili ? a spec ta= -40 ta= 25 ta= 125 0 1 2 3 4 012 3456 supply voltage : vcc v current consumption at write action : icc1, 2 ma spec ta= -40 ta= 25 ta= 125 spec 0 1 2 3 4 012 3456 supply voltage : vcc v supply current (write) : icc1,2 ma spec ta= -40 ta= 25 ta= 125 spec figure 11. input leakage current ili (csb,sck,si,holdb,wpb) figure 12. output leakage current ilo(so)(vcc=5.5v) figure 13. supply current (write) icc1,2 0 0.5 1 1.5 2 2.5 0123456 supply voltage : vcc v supply current (read) : icc3, 4 ma spec ta= -40 ta= 25 ta= 125 spec figure 14. supply current (read) icc3,4
BR25H010-2C 9/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 typical performance curves \ continued 0 1 2 3 4 5 0123456 supply voltage : vcc v supply current : icc5 ma spec ta= -40 ta= 25 ta= 125 0 2 4 6 8 10 12 0123456 supply voltage : vcc v standby current : isb ? a spec ta= -40 ta= 25 ta= 125 0.1 1 10 100 0123456 supply voltage : vcc v sck frequency : fsck [mhz] spec ta= -40 ta= 25 ta= 125 spec figure 15. supply current (read) icc5 figure 17. sck frequency fsck figure.16 standby current isb figure 18. sck high time tsckwh 0 20 40 60 80 100 0123456 supply voltage : vcc v sck high time : tsckwh ns spec ta= -40 ta= 25 ta= 125 spec
BR25H010-2C 10/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 t ypical performance curves \ continued 0 20 40 60 80 100 0123456 supply voltage : vcc v sck low time : tsckwl ns spec ta= -40 ta= 25 ta= 125 spec 0 20 40 60 80 100 0123456 supply voltage : vcc v csb high time : tcs ns spec ta= -40 ta= 25 ta= 125 spec figure 19. sck low time tsckwl figure 20. csb high time tcs 0 20 40 60 80 100 0123456 supply voltage : vcc v csb setup time : tcss ns spec ta= -40 ta= 25 ta= 125 spec figure 21. csb setup time tcss 0 20 40 60 80 100 0123456 supply voltage : vcc v csb hold time : tcsh ns spec ta= -40 ta= 25 ta= 125 spec figure 22. csb hold time tcsh
BR25H010-2C 11/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 typical performance curves \ continued 0 10 20 30 40 50 0123456 supply voltage : vcc v si setup time : tdis ns spec ta= -40 ta= 25 ta= 125 spec 0 10 20 30 40 50 0123456 supply voltage : vcc v si hold time : tdih ns spec ta= -40 ta= 25 ta= 125 spec 0 20 40 60 80 100 0123456 supply voltage : vcc v data output delay time : tpd1 ns spec ta= -40 ta= 25 ta= 125 spec figure 23. si setup time tdis figure 24. si hold time tdih figure 25. data output delay time tpd1 (cl=100pf) 0 20 40 60 80 100 0123456 supply voltage : vcc v data output delay time2 : tpd2 ns spec ta= -40 ta= 25 ta= 125 spec figure 26. data output delay time tpd2 (cl=30pf)
BR25H010-2C 12/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 typical performance curves \ continued 0 20 40 60 80 100 120 0123456 supply voltage : vcc v output disable time : toz ns spec ta= -40 ta= 25 ta= 125 spec figure 27.output disable time toz 0 10 20 30 40 50 0123456 supply voltage : vcc v holdb setting hold time : thfh ns spec ta= -40 ta= 25 ta= 125 spec 0 20 40 60 80 100 0123456 supply voltage : vcc v holdb release hold time : thrh ns spec ta= -40 ta= 25 ta= 125 spec figure 29. holdb release hold time thrh figure 28. holdb setting hold time thfh figure 30. time from holdb to output high-z thoz 0 30 60 90 120 0123456 supply voltage : vcc v time from holdb to output high-z : thoz ns spec ta= -40 ta= 25 ta= 125 spec
BR25H010-2C 13/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 typical performance curves \ continued 0 2 4 6 8 012 3456 supply voltage : vcc v write time : te/w ms spec ta= -40 ta= 25 ta= 125 figure 34. write cycle time te/w 0 20 40 60 80 100 0123456 supply voltage : vcc v output fall time : tfo ns spec ta= -40 ta= 25 ta= 125 figure 33. output fall time tfo figure 32. output rise time tro 0 20 40 60 80 100 0123456 supply voltage : vcc v output rise time : tro ns spec ta= -40 ta= 25 ta= 125 figure 31. time from holdb to output change thpd 0 20 40 60 80 100 0123456 supply voltage : vcc v time from holdb to output change : thpd ns spec ta= -40 ta= 25 ta= 125 spec
BR25H010-2C 14/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 features status registers this ic has status registers. the status register s are of 8 bits and express the following parameters. bp0 and bp1 can be set by write status register command. these 2 bits are me morized into the eeprom, therefore are valid even when power source is turned off. number of data rewrite times and data hold time are same as characte ristics of the eeprom. wen can be set by write enable command and write disable command. wen becomes write disable status when power source is turned off. r/b is for write conf irmation, therefore cannot be set externally. the value of status register can be read by read status command. status registers product number bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 BR25H010-2C 1 1 1 1 bp1 bp0 wen r DD /b bit memory location function contents bp1 bp0 eeprom eeprom write disabl e block designation bit this designates the write disable area of eeprom. write designation areas of product numbers are shown below. wen register write and write status register write enable / disable status confirmation bit wen=0=prohibited , wen=1=permitted this confirms prohibited status or permitted status of the write and the write status register. r DD /b register write cycle status (ready / busy) confirmation bit r/b=0=ready , r/b=1=busy this confirms ready status or busy status of the write cycle. write disable block setting bp1 bp0 BR25H010-2C 0 0 none 0 1 60h-7fh 1 0 40h-7fh 1 1 00h-7fh
BR25H010-2C 15/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 wpb pin by setting wpb=low, write command is prohibited. as for BR25H010-2C, both write and wrsr commands are prohibited. however, when write cycle is in execution, no interruption can be made. product number wrsr write BR25H010-2C prohibition possible prohibition possible holdb pin by holdb pin, data transfer can be interrupted. when sck=?0?, by making holdb from ?1? into?0?, data transfer to eeprom is interrupted. when sck = ?0 ?, by making holdb from ?0? into ?1?, data transfer is restarted. command mode command contents ope codes wren write enable write enable command 0000 *110 wrdi write disable write disable command 0000 *100 read read read command 0000 *011 write write write command 0000 *010 rdsr read status register status register read command 0000 *101 wrsr write status register status register write command 0000 *001 *:don?t care
BR25H010-2C 16/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 timing chart 1. write enable (wren) / disable (wrdi) cycle this ic has write enable status and write disable status. it is set to write enable status by write enable command, and it is set to write disable status by write disable command. as for these commands, set csb low, and then input the respective ope codes. the respective commands accept command at the 7-th clock rise. even with input over 7 clocks, command becomes valid. when to carry out write and write status register command, it is necessary to set write enable status by the write enable command. if write or write status register command is input in the write disable status, commands are cancelled. and even in the write enable status, once write and write status register co mmand is executed. it gets in the write disable status. after power on, this ic is in write disable status. 2. read command (read) product number address length BR25H010-2C a6-a0 by read command, data of eeprom can be read. as for this command, set csb low, then input address after read ope code. eeprom starts data output of the designated address. data output is started from sck fall of 15 clock, and from d7 to d0 sequentially. this ic has increment read function. after output of data for 1 byte (8bits), by continuing input of sck, data of the next address can be read. increment read can read all the addresses of eeprom. after reading data of the most significant address, by continuing increment read, data of the most insignificant address is read. wren (write enable): write enable figure 35. write enable command figure 36. write disable wrdi (write disabl e): write disable *= don?t care *= don?t care high-z 6 03 7 12 45 csb sck so si 0000*1110 high-z 00 0 0 si *1 1 0 0 03 12 4 7 csb sck 5 6 so figure 37. read command *=don?t care high-z 1 1 0 0 3 7 1 2 d6 so csb sck si 4 5 a 4 6 8 a 0 a 1 d7 15 22 16 d0 0 0 0 0 d2 d1 d> d> d> d> d> d> d> d> d> d> d> d> d> d> d> d> d> d> 9 10 11 a6 a5 * *
BR25H010-2C 17/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 3. write command (write) by write command, data of eeprom can be written. as for this command, set csb low, then input address and data after write ope code. then, by making csb high, the eeprom starts writing. the write time of eeprom requires time of te/w (max 4ms). during te/w, other than status read command is not accepted. start csb after taking the last data (d0), and before the next sck clock starts. at other timing, write command is not executed, and this write command is cancelled. this ic has page write function, and after input of data for 1 byte (8 bits), by continuing data input without starting csb, data up to 16 bytes can be written for one te/w. in page write, the insignificant 4 bit of the designated address is incremented internally at every time when data of 1 byte is input and data is written to respective addresses. when data of the maximum bytes or higher is input, addres s rolls over, and previously input data is overwritten. write command is executed when csb rises between the sck clock rising edge to recognize the 8th bits of data input and the next sck rising edge. at other timings the write command is not executed and cancelled (figure.48 valid timing c). in page write, the csb valid timing is every 8 bits. if csb rises at other timings page write is cancelled together with the write command and the input data is reset. page0 00h 01h 02h ??? 0eh 0fh page 1 10h 11h 12h ??? 1eh 1fh page 2 20h 21h 22h ??? 2eh 2fh ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? page m-1 n-31 n-30 n-29 ??? n-17 n-16 page *2 m n-15 n-14 n-13 ??? n-1 *1 n product number address length BR25H010-2C a6-a0 figure 38. write command figure 39. n byte page write command *1 n=127d=7fh : BR25H010-2C *2 m=7 : BR25H010-2C figure 40. eeprom physical address for page write command (16byte) 16byte this column addresses are top address of this page high-z 23 d0 0 0 0 0 d2 d1 d7 15 22 16 d6 0 a0 a1 1 1 2 4 0 csb sck si so 0 3 7 8 5 6 a4 d> d> d> d> d> d> d> d> d> d> d> d> d> d> d> d> a5 a6 d> d> d> d> 9 *=don?t care n= up to 16 bytes *=don?t care high-z (8n+16)-1 24 d7 0 0 0 0 * d1 d0 d7 15 23 16 d6 0 a 0 a 1 * 1 1 2 4 0 csb sck si so 0 3 7 8 5 6 d> d> d> d> d> d> d> d> d> d> d> d> d> d> d> d> d> d> 12 d> d> d> d> d> d> d> d> 17 22 25 8n+16 d6 d7 d6 d0 d> d> d> d> d> d> csb ??g (8n+16)-2 (8n+16)-7 (8n+16)-8 a 3 a 6 this column addresses are the last address of this page
BR25H010-2C 18/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 example of page write command no. addresses of page0 00h 01h 02h ???? 0eh 0fh previous data 00h 01h 02h ???? 0eh 0fh 2 bytes input data aah 55h - ???? - - after no. aah 55h 02h ???? 0eh 0fh aah 55h aah ???? aah 55h 18 byte input data ffh 00h - ???? - - after no. ffh 00h aah ???? aah 55h a in case of input the data of no. which is 2 bytes page write command for the data of no. , eeprom data changes like no. . b in case of input the data of no. which is 18 bytes page write command for the data of no. , eeprom data changes like no. . c in case of a or b, when write command is cancelled, eeprom data keep no. . in page write command, when data is set to the last address of a page (e.g. address ?1fh? of page 1), the next data will be set to the top address of the same page (e.g. address ?10h? of page 1). this is why page write address increment is available in the same page. as a reference, if of 16 bytes, page writ e command is executed for 2 bytes the data of the other 14 bytes without addresses will not be changed.
BR25H010-2C 19/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 4. status register write / read command write status register command can write status register data. the data can be written by this command are 2 bits, that is, bp1 (bit3) and bp0 (bit2) among 8 bits of status register. by bp1 and bp0, writ e disable block of eeprom can be set. as for this command, set csb low, and input ope code of write status register, and input data. then, by making csb high, eeprom starts writing. write time requires time of te/w as sa me as write. as for csb rise, start csb after taking the last data bit (bit0), and before the next sck clock starts. at other timing, command is cancelled. write disable block is determined by bp1 and bp0, and the block can be selected from 1/4 of memory array, 1/2, and entire memory array. (refer to the write disable block setting table.) to the write disabled block, write cannot be made, and only read can be made. * figure 41. status register write command figure 42. status register read command high-z bit7 bit6 bit5 bit4 11 bp0 1 bp1 bit3 bit2 bit1 bit0 13 csb sck si 1 1 10 6 0 so 14 1 2 wen r/b 11 15 3 7 9 0 5 12 0 0 0 0 4 8 1 =don?t care csb sck high-z =don't care 0 0 0 0 1 0 1 2 4 0 si so 0 3 7 8 5 6 9 10 11 12 13 14 15 bp1 bp0 bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
BR25H010-2C 20/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 at standby current at standby set csb ?h?, and be sure to set sck, si, wpb, holdb input ?l? or ?h?. do not input intermediate electric potential. timing as shown in figure.43, at standby, when sck is ?h?, even if csb is fallen, si status is not r ead at fall edge. si status is read at sck rise edge after fall of csb. at standby and at power on/off, set csb ?h? status. wpb cancel valid area wpb is normally fixed to ?h? or ?l? for use, but when wpb is controlled so as to cancel write status register command and write command, pay attention to the following wpb valid timing. while write or write status register command is executed, by setting wpb = ?l? in cancel valid area, command can be cancelled. the area from command ope code before csb rise at internal automatic write start becomes the cancel valid area. however, once write is started, any input cannot be cancelled. wpb input becomes don?t care, and cancellation becomes invalid. holdb pin by holdb pin, command communication can be stopped temporarily (hold status). the holdb pin carries out command communications normally when it is high. to get in hold status, at command communication, when sck=low, set the holdb pin low. at hold status, sck and si become don?t care, and so becomes high impedance (high-z). to release the hold status, set the holdb pin high when sck=low. after that, communication can be restarted from the point before the hold status. for example, when hold status is made after a5 address input at read, after release of hold status, by starting a4 address input, read can be restarted. when in hold status, leave csb low. when it is set csb=high in hold status, the ic is reset, therefore communication after that cannot be restarted. 0 1 2 command start here. si is read. even if csb is fallen at sck=si=?h?, si status is not read at that edge. csb sck si figure 43. operating timing figure 45. wpb valid timing (write) figure 44. wpb valid timing (wrsr) 6 7 ope code data te/w data write time sck 15 16 invalid csb valid(wen is reset by wpb=l) 6 7 ope code te/w data write time sck 15 24 invalid 8 address 23 csb data valid(wen is reset by wpb=l)
BR25H010-2C 21/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 method to cancel each command read ? method to cancel : cancel by csb = ?h? rdsr ? method to cancel : cancel by csb = ?h? write,page write a ope code, address input area. cancellation is available by csb=?h? b data input area (d7 to d1 input area) cancellation is available by csb=?h? c data input area (d0 area) when csb is started, write starts. after csb rise, cancellation cannot be made by any means. d te/w area. cancellation is available by csb = ?h?. however, when write starts (csb is started) in the area c, cancellation cannot be made by any means. and by inputting on sck clock, cancellation cannot be made. in page write mode, there is write enable area at every 8 clocks. note 1) if vcc is made off during write executio n, designated address data is not guaranteed, therefore write it once again. note 2) if csb is started at the same timing as that of the sck rise, write execution / cancel becomes unstable, therefore, it is recommended to fall in sck = ?l? area. as for sck rise, assure timing of tcss / tcsh or higher. wrsr a from ope code to 15 rise. cancel by csb =?h?. b from 15 clock rise to 16 clock rise (write enable area). when csb is started, write starts. after csb rise, cancellation cannot be made by any means. c after 16 clock rise. cancel by csb=?h?. however, when write starts (csb is started) in the area b, cancellation cannot be made by any means. and, by inputting on sck clock, cancellation cannot be made. note 1) if vcc is made off during write execution, designated address data is not guaranteed, therefore write it once again note 2) if csb is started at the same timing as that of the sck rise, write execution / cancel becomes unstable, therefore, it is recommended to fall in sck = ?l? area. as for sck rise, assure timing of tcss / tcsh or higher. wren/wrdi a from ope code to 7-th clock rise, cancel by csb = ?h?. b cancellation is not available when csb is started after 7-th clock. ope code address cancel available in all areas of read mode data 8 bits 8 bits 8 bits figure 46 read cancel valid timing ope code cancel available in all areas of rdsr mode data 8 bits 8 bits figure 47 rdsr cancel valid timing ope code address a data te/w b d c 8bits 8bits 8bits d7 b d6 d5 d4 d3 d2 d1 d0 sck si c ope code data te/w 8 bits 14 15 16 17 d1 d0 a b c 8 bits a b c sck si ope code 8 bits 7 8 9 a b sck figure 49. wrsr cancel valid timing figure 50. wren/wrdi cancel valid timing figure 48. write cancel valid timing
BR25H010-2C 22/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 high speed operation in order to realize stable high speed operations, pay attention to the following input / output pin conditions. input terminal pull up, pull down resistance when to attach pull up, pull down resistance to eeprom input terminal, select an appro priate value for the microcontroller vol, iol from vil characteristics of this ic. pull up resistance and, in order to prevent malfunction, mistake write at power on/off, be sure to make csb pull up. pull down resistance further, by amplitude vihe, vile of sig nal input to eeprom, operation speed changes. by inputting signal of amplitude of vcc / gnd level to input, more stable high speed operations can be realized. on the contrary, when amplitude of 0.8vcc / 0.2vcc is input, operatio n speed becomes slow. *1 in order to realize more stable high speed operation, it is recommended to make the values of r pu , r pd as large as possible, and make the amplitude of signal input to eeprom close to the amplitude of vcc / gnd level. ( 1 at this moment, operating timing guaranteed value is guaranteed.) so load capacity condition load capacity of so output terminal affects upon delay characteristic of so output. (data output delay time, time from holdb to high-z) in order to make output delay characteristic in to higher speed, make so load capacity small. in concrete, ?do not connect many devices to so bus?, ?make the wire between the controller and eeprom short?, and so forth. other cautions make the wire length from the microcontroller to eeprom input signal same length, in order to prevent setup / hold violation to eeprom, owing to difference of wire length of each input. i olm v ile v olm ?l? output ?l? input microcontroller eeprom r pu figure 51. pull up resistance r pu R 5-0.4 210 - 3 r pu Q 2.3[k ?] with the value of rpu to satisfy the above equation, v olm becomes 0.4v or lower, and with v ile (=1.5v), the equation is also satisfied. ?v ile :eeprom v il specifications ?v olm :microcontroller v ol specifications ?i olm :microcontroller i ol specifications i ohm v ihe v ohm microcontroller eeprom ?h? output ?h? input r pd figure 52. pull down resistance example) when v cc =5v, v ohm =v cc -0.5v, i ohm 0.4ma, v ihe =v cc 0.7v, from the equation , r pd R 5-0.5 0.410 - 3 r pu R 11.3[k ? ] example) when vcc=5v, v ile =1.5v, v olm =0.4v, i olm =2ma, from the equation , figure 53. vil dependency of data output delay time tpd tpd_vil characteristics 0 10 20 30 40 50 60 70 80 0 0.2 0.4 0.6 0.8 1 vil[v] tpd[ns] vcc=2.5 v ta=25 vih=vcc c l =100pf spec r pu R v cc -v olm i olm ??? v olm Q v ile ??? r pd R v ohm i ohm ??? v ohm R v ihe ???
BR25H010-2C 23/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 i/o equivalence circuit output circuit input circuit oeint. so figure 54. so output equivalent circuit csb reset int. figure 55. csb input equivalent circuit sck si holdb wpb figure 56. sck input equivalent circuit figure 57. si input equivalent circuit figure 58. holdb input equivalent circuit figure 59. wpb input equivalent circuit
BR25H010-2C 24/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 power-up/down conditions at power on/off, set csb ?h? (=vcc). when csb is ?l?, this ic gets in input accept status (active) . if power is turned on in this status, noises and the likes may cause malfunction, mistake write or so. to prevent these, at pow er on, set csb ?h?. (when csb is in ?h? status, all inputs are canceled.) (good example) csb terminal is pulled up to vcc. at power off, take 10ms or higher before supply. if power is turned on without observing this condition, the ic internal circuit may not be reset, which please note. (bad example) csb terminal is ?l? at power on/off. in this case, csb always becomes ?l? (active status), and eeprom may have malfunction, mistake write owing to noises and the likes. even when csb input is high-z, the status becomes like this case, which please note. lvcc circuit lvcc (vcc-lockout) circuit prevents data rewrite action at low power, and prevents wrong write. at lvcc voltage (typ. =1.9v) or below, it prevent data rewrite. p.o.r. circuit this ic has a por (power on reset) circuit as mistake writ e countermeasure. after por action, it gets in write disable status. the por circuit is valid only when power is on, and does not work when power is off. when power is on, if the recommended conditions of the following tr, toff, and vbot are not satisfied, it may become write enable status owing to noises and the likes. recommended conditions of tr, toff, vbot noise countermeasures vcc noise (bypass capacitor) when noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is recommended to attach a bypass capacitor (0.1 f) between ic vcc and gnd. at that moment, attach it as close to ic as possible.and, it is also recommended to attach a bypass capacitor between board vcc and gnd. sck noise when the rise time (tr) of sck is long, and a certain degree or more of noise exists, malfunction may occur owing to clock bit displacement. to avoid this, a schmitt trigger circuit is buil t in sck input. the hysteresis width of this circuit is set a bout 0.2v, if noises exist at sck input, set the noise amplitude 0.2vp-p or below. and it is recommended to set the rise time (tr) of sck 100ns or below. in the case when the rise time is 100ns or higher, take sufficient noise countermeasures. make the clock rise, fall time as small as possible. wpb noise during execution of write status register command, if there exist noises on wpb pin, mistake in recognition may occur and forcible cancellation may result, which please note. to avoid this, a schmitt trigger circuit is built in wpb input. in the sam e manner, a schmitt trigger circuit is built in csb input, si input and holdb input too. tr toff vbot 10ms or below 10ms or higher 0.3v or below 100ms or below 10ms or higher 0.2v or below figure 60. csb timing at power on/off tr toff vbot 0 vcc figure 61. rise waveform bad example good example gnd csb vcc gnd vcc vcc
BR25H010-2C 25/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 operational notes (1) described numeric values and data are design repres entative values, and the values are not guaranteed. (2) application circuit although we can recommend the application circuits contained herein with a relatively high degree of confidence, we ask that you verify all characteristics and specifications of the circuit as well as its performance under actual conditions. please note that we cannot be held responsible for problems that may arise due to patent infringements or noncompliance with any and all applicable laws and regulations. (3) absolute maximum ratings operating the ic over the absolute maximum ratings may damage the ic. the damage can either be a short circuit between pins or an open circuit between pins. therefore, it is im portant to consider circuit protection measures, such as adding a fuse, in case the ic is operated over the absolute maximum ratings. (4) ground voltage the voltage of the ground pin must be the lowest voltage of all pins of the ic at all operating conditions. ensure that no pins are at a voltage below the ground pin at any time, even during transient condition. (5) thermal consideration use a thermal design that allows for a sufficient margin by taking into account the permissible power dissipation (pd) in actual operating conditions. consider pc that does not exceed pd in actual operating conditions (pc pd). package power dissipation : pd (w)=(tjmax ta ) / ja power dissipation : pc (w)=(vcc vo)io+vccib tjmax : maximum junc tion temperature=150 , ta : peripheral temperature[ ] , ja : thermal resistance of package-ambience[ /w], pd : package power dissipation [w], pc : power dissipation [w], vcc : input voltage, vo : output voltage, io : load, ib : bias current (6) short between pins and mounting errors be careful when mounting the ic on printed circuit boards. the ic may be damaged if it is mounted in a wrong orientation or if pins are shorted together. short circuit may be caused by conductive particles caught between the pins. (7) operation under strong electromagnetic field operating the ic in the presence of a strong electromagnetic field may cause the ic to malfunction.
BR25H010-2C 26/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 part numbering b r 2 5 h 0 1 0 x x x - 2 c x x bus type 25: spi packaging and forming specification e2: embossed tape and reel tr: embossed tape and reel (msop8 package only) operating temperature/ operating voltage h: -40 to +125 / 2.5v to 5.5v process code 010= 1k capacity package fvm: msop8 fvt: tssop-b8 f: sop8 fj: sop-j8
BR25H010-2C 27/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 physical dimension tape and reel information package name msop8 direction of feed reel ? order quantity needs to be multiple of the minimum quantity. embossed carrier tape tape quantity direction of feed the direction is the 1pin of product is at the upper right when you hold reel on the left hand and you pull out the tape on the right hand 3000pcs tr () 1pin
BR25H010-2C 28/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 package name tssop-b8 direction of feed reel ? order quantity needs to be multiple of the minimum quantity. embossed carrier tape tape quantity direction of feed the direction is the 1pin of product is at the upper left when you hold reel on the left hand and you pull out the tape on the right hand 3000pcs e2 () 1pin
BR25H010-2C 29/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 package name sop8 ? order quantity needs to be multiple of the minimum quantity. embossed carrier tape tape quantity direction of feed the direction is the 1pin of product is at the upper left when you hold reel on the left hand and you pull out the tape on the right hand 2500pcs e2 () direction of feed reel 1pin (unit : mm) pkg : sop8 drawing no. : ex112-5001-1 (max 5.35 (include.burr))
BR25H010-2C 30/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 package name sop-j8 ? order quantity needs to be multiple of the minimum quantity. embossed carrier tape tape quantity direction of feed the direction is the 1pin of product is at the upper left when you hold reel on the left hand and you pull out the tape on the right hand 2500pcs e2 () direction of feed reel 1pin
BR25H010-2C 31/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 marking diagrams(top view) sop-j8(top view) h010 part number marking lot number 1pin mark tssop-b8(top view) h010 part number marking lot number 1pin mark sop8(top view) h010 part number marking lot number 1pin mark msop8 (top view) part number marking lot number 1pin mark h01 0
BR25H010-2C 32/32 datasheet datasheet www.rohm.com ?2013 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 tsz02201-0r1r0g100070-1-2 21.mar.2013 rev.001 revision history date revision changes 21.mar. 2013 001 new release
datasheet datasheet notice - rev.004 ? 2013 rohm co., ltd. all rights reserved. notice general precaution 1. before you use our products, you are requested to care fully read this document and fully understand its contents. rohm shall not be in any way responsible or liable for fa ilure, malfunction or accident arising from the use of any rohm?s products against warning, caution or note contained in this document. 2. all information contained in this document is current as of the issuing date and subjec t to change without any prior notice. before purchasing or using rohm?s products, please confirm the la test information with a rohm sales representative. precaution on using rohm products 1. if you intend to use our products in devices requirin g extremely high reliability (such as medical equipment, aircraft/spacecraft, nuclear power controllers, etc.) and whos e malfunction or failure may cause loss of human life, bodily injury or serious damage to property (?specific applications?), please consult with the rohm sales representative in advance. unless otherwise agreed in writ ing by rohm in advance, rohm shall not be in any way responsible or liable for any damages, expenses or losses in curred by you or third parties arising from the use of any rohm?s products for specific applications. 2. rohm designs and manufactures its products subject to strict quality control system. however, semiconductor products can fail or malfunction at a certain rate. please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe desi gn against the physical injury, damage to any property, which a failure or malfunction of our products may cause. the following are examples of safety measures: [a] installation of protection circuits or other protective devices to improve system safety [b] installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. our products are not designed under any special or extr aordinary environments or conditi ons, as exemplified below. accordingly, rohm shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any rohm?s products under an y special or extraordinary environments or conditions. if you intend to use our products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] use of our products in any types of liquid, incl uding water, oils, chemicals, and organic solvents [b] use of our products outdoors or in places where the products are exposed to direct sunlight or dust [c] use of our products in places where the products ar e exposed to sea wind or corrosive gases, including cl 2 , h 2 s, nh 3 , so 2 , and no 2 [d] use of our products in places where the products are exposed to static electricity or electromagnetic waves [e] use of our products in proximity to heat-producing components, plastic cords, or other flammable items [f] sealing or coating our products with resin or other coating materials [g] use of our products without cleaning residue of flux (ev en if you use no-clean type fluxes, cleaning residue of flux is recommended); or washing our products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] use of the products in places subject to dew condensation 4. the products are not subjec t to radiation-proof design. 5. please verify and confirm characteristics of the final or mounted products in using the products. 6. in particular, if a transient load (a large amount of load applied in a short per iod of time, such as pulse. is applied, confirmation of performance characteristics after on-boar d mounting is strongly recomm ended. avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading c ondition may negatively affect product performance and reliability. 7. de-rate power dissipation (pd) depending on ambient temper ature (ta). when used in seal ed area, confirm the actual ambient temperature. 8. confirm that operation temperat ure is within the specified range described in the product specification. 9. rohm shall not be in any way responsible or liable for fa ilure induced under deviant condi tion from what is defined in this document.
datasheet datasheet notice - rev.004 ? 2013 rohm co., ltd. all rights reserved. precaution for mounting / circuit board design 1. when a highly active halogenous (chlori ne, bromine, etc.) flux is used, the resi due of flux may negatively affect product performance and reliability. 2. in principle, the reflow soldering method must be used; if flow soldering met hod is preferred, please consult with the rohm representative in advance. for details, please refer to rohm mounting specification precautions regarding application examples and external circuits 1. if change is made to the constant of an external circuit, pl ease allow a sufficient margin considering variations of the characteristics of the products and external components, including transient characteri stics, as well as static characteristics. 2. you agree that application notes, re ference designs, and associated data and in formation contained in this document are presented only as guidance for products use. theref ore, in case you use such information, you are solely responsible for it and you must exercise your own indepen dent verification and judgment in the use of such information contained in this document. rohm shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. precaution for electrostatic this product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. please take proper caution in your manufacturing process and storage so that voltage exceeding t he products maximum rating will not be applied to products. please take special care under dry condit ion (e.g. grounding of human body / equipment / solder iron, isolation from charged objects, se tting of ionizer, friction prevention and temperature / humidity control). precaution for storage / transportation 1. product performance and soldered connections may deteriora te if the products are stor ed in the places where: [a] the products are exposed to sea winds or corros ive gases, including cl2, h2s, nh3, so2, and no2 [b] the temperature or humidity exceeds those recommended by rohm [c] the products are exposed to di rect sunshine or condensation [d] the products are exposed to high electrostatic 2. even under rohm recommended storage c ondition, solderability of products out of recommended storage time period may be degraded. it is strongly recommended to confirm sol derability before using products of which storage time is exceeding the recommended storage time period. 3. store / transport cartons in the co rrect direction, which is indicated on a carton with a symbol. otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. use products within the specified time after opening a humidity barrier bag. baking is required before using products of which storage time is exceeding the recommended storage time period. precaution for product label qr code printed on rohm products label is for rohm?s internal use only. precaution for disposition when disposing products please dispose them proper ly using an authorized industry waste company. precaution for foreign exchange and foreign trade act since our products might fall under cont rolled goods prescribed by the applicable foreign exchange and foreign trade act, please consult with rohm representative in case of export. precaution regarding intellectual property rights 1. all information and data including but not limited to application example contained in this document is for reference only. rohm does not warrant that foregoi ng information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. rohm shall not be in any way responsible or liable for infringement of any intellectual property rights or ot her damages arising from use of such information or data.: 2. no license, expressly or implied, is granted hereby under any intellectual property rights or other rights of rohm or any third parties with respect to the information contained in this document.
datasheet datasheet notice - rev.004 ? 2013 rohm co., ltd. all rights reserved. other precaution 1. the information contained in this document is provi ded on an ?as is? basis and rohm does not warrant that all information contained in this document is accurate and/or error-free. rohm shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or concerning such information. 2. this document may not be reprinted or reproduced, in whol e or in part, without prior written consent of rohm. 3. the products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of rohm. 4. in no event shall you use in any wa y whatsoever the products and the related technical information contained in the products or this document for any military purposes, incl uding but not limited to, the development of mass-destruction weapons. 5. the proper names of companies or products described in this document are trademarks or registered trademarks of rohm, its affiliated companies or third parties.

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